Spin relaxation time, spin dephasing time and ensemble spin dephasing time in n-type GaAs quantum wells

Spin dephasing in quantum wires

We study high-field spin transport in a quantum wire using a semiclassical approach. Spin dephasing (or spin depolarization) in the wire is caused by D’yakonov-Perel’ relaxation associated with bulk inversion asymmetry (Dresselhaus spin-orbit coupling) and structural inversion asymmetry (Rashba spin-orbit coupling). The depolarization rate is found to depend strongly on the initial polarization...

Symmetry and spin dephasing in (110)-grown quantum wells.

Symmetry and spin dephasing in (110)-grown GaAs quantum wells (QWs) are investigated applying magnetic field induced photogalvanic effect and time-resolved Kerr rotation. We show that magnetic field induced photogalvanic effect provides a tool to probe the symmetry of (110)-grown quantum wells. The photocurrent is only observed for asymmetric structures but vanishes for symmetric QWs. Applying ...

Spin relaxation in GaAs(110) quantum wells

Electron-dephasing time in a two-dimensional spin-polarized system with Rashba spin-orbit interaction.

We calculate the dephasing time tau(phi)(B) of an electron in a two-dimensional system with a Rashba spin-orbit interaction, spin-polarized by an arbitrarily large magnetic field parallel to the layer. tau(phi)(B) is estimated from the logarithmic corrections to the conductivity within a perturbative approach that assumes weak, isotropic disorder scattering. For any value of the magnetic field,...

Dephasing time of GaAs electron-spin qubits coupled to a nuclear bath exceeding 200 mu s

Qubits, the quantum mechanical bits required for quantum computing, must retain their quantum states for times long enough to allow the information contained in them to be processed. In many types of electron-spin qubits, the primary source of information loss is decoherence due to the interaction with nuclear spins of the host lattice. For electrons in gate-defined GaAs quantum dots, spin-echo...